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FAQ: BeSang's TRUE 4F2 DRAM Technology Breakthrough

FaqStaq News - Just the FAQs October 14, 2025
By FAQstaq Staff
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FAQ: BeSang's TRUE 4F2 DRAM Technology Breakthrough

Summary

BeSang has announced a breakthrough TRUE 4F2 DRAM technology that overcomes the scaling limits of conventional 6F2 DRAM, achieving what was previously considered impossible in the semiconductor industry. This advancement enables new levels of memory density, efficiency, speed, and cost savings for both standalone DRAM products and embedded applications.

What is TRUE 4F2 DRAM technology?

TRUE 4F2 DRAM is BeSang’s breakthrough memory technology that delivers an effective 4F2 cell size, overcoming the scaling limitations of conventional 6F2 DRAM that has been the industry standard for decades.

Why is this 4F2 DRAM breakthrough significant?

This is significant because 4F2 DRAM has been viewed as an industry goal but never achieved as a market reality due to technical barriers, and BeSang’s technology now makes it practical for the first time.

What are the main benefits of TRUE 4F2 DRAM?

The technology unlocks new levels of density, efficiency, speed, and cost savings, providing low-cost solutions for standalone DRAM and ultra high-density embedded cache memories for various applications.

How does TRUE 4F2 DRAM compare to conventional DRAM?

It overcomes the scaling limits of conventional 6F2 DRAM, achieving the long-sought 4F2 cell size that was previously considered improbable due to structural and processing barriers.

What applications will benefit from this technology?

It will benefit standalone DRAM products and provide ultra high-density embedded L3 cache memory solutions for GPU/CPU/AP applications, boosting system performance and reducing dependence on high-stack HBM for AI.

What types of integrated circuits does TRUE 4F2 DRAM support?

The technology supports traditional 2D ICs, monolithic 3D ICs, and package level 3D ICs, enabling both standalone and embedded applications.

Who announced this breakthrough technology?

BeSang Inc., the world’s leading 3D IC technology company, announced the TRUE 4F2 DRAM breakthrough, with Chris Lee, Chief Operating Officer of BeSang, providing commentary on the development.

When was this technology announced?

BeSang announced the TRUE 4F2 DRAM breakthrough on October 14, 2025.

How will this technology impact AI applications?

It will provide ultra high-density embedded L3 cache memory solutions that boost system performance drastically and reduce dependence on high-stack HBM for AI applications.

Where can I find more information about BeSang and this technology?

For more information, please visit www.besang.com.

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